17,185 research outputs found

    Ingot slicing machine and method

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    An improved method for simultaneously slicing one or a multiplicity of boules of silicon into silicon wafers is described. A plurality of vertical stacks of horizontal saw blades of circular configuration are arranged in juxtaposed coaxial alignment. Each blade is characterized by having a cutting diameter slightly greater than the cutting diameter of the blade arranged immediately above, imparting a simultaneous rotation to the blades

    Digital Switching in the Quantum Domain

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    In this paper, we present an architecture and implementation algorithm such that digital data can be switched in the quantum domain. First we define the connection digraph which can be used to describe the behavior of a switch at a given time, then we show how a connection digraph can be implemented using elementary quantum gates. The proposed mechanism supports unicasting as well as multicasting, and is strict-sense non-blocking. It can be applied to perform either circuit switching or packet switching. Compared with a traditional space or time domain switch, the proposed switching mechanism is more scalable. Assuming an n-by-n quantum switch, the space consumption grows linearly, i.e. O(n), while the time complexity is O(1) for unicasting, and O(log n) for multicasting. Based on these advantages, a high throughput switching device can be built simply by increasing the number of I/O ports.Comment: 24 pages, 16 figures, LaTe

    Experimental and theoretical study of artificial plasma layers produced by two intersecting beams in a chamber

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    The work done on the Bragg scattering of electromagnetic waves by microwave produced plasma layers is reported. Also summarized is the work accomplished on the propagation of high power microwave pulses in an air breakdown environment. Ongoing work on the theoretical model and numerical results of pulse propagation in air is also presented as are the results of studying the decay of plasma density and temperature

    Interpretation of the characteristics of ocean-dumped sewage sludge related to remote sensing

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    Wastewater sludge characteristics in general, and characteristics of wastewater sludges generated by the City of Philadelphia in particular, were addressed. The types and sources of wastewater sludges, a description of sludge treatment and disposal processes, examination of sludge generation and management for the City of Philadelphia, and definition of characteristics for typical east coast sludges undergoing ocean disposal were discussed. Specific differences exist between the characteristics of primary and secondary wastewater sludges, especially with the nature and size distribution of the solids particles. The sludges from the City of Philadelphia monitored during remote sensing experiments were mixtures of various sludge types and lacked distinguishing characteristics. In particular, the anaerobic digestion process exerted the most significant influence on sludge characteristics for the City of Philadelphia. The sludges generated by the City of Philadelphia were found to be typical and harbor no unique features

    Sialons as high temperature insulators

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    Sialons were evaluated for application as high temperature electrical insulators in contact with molybdenum and tungsten components in hard vacuum applications. Both D.C. and variable frequency A.C. resistivity data indicate the sialons to have electrical resistivity similar to common oxide in the 1000 C or higher range. Metallographic evaluations indicate good bonding of the type 15R ALN polytype to molybdenum and tungsten. The beta prime or modified silicon nitride phase was unacceptable in terms of vacuum stability. Additives effect on electrical resistivity. Similar resistivity decreases were produced by additions of molybdenum or tungsten to form cermets. The use of hot pressing at 1800 C with ALN, Al2 O3 and Si3N4 starting powders produced a better product than did a combination of SiO2 and AIN staring powders. It was indicated that sialons will be suitable insulators in the 1600K range in contact with molybdenum or tungsten if they are produced as a pure ceramic and subsequently bonded to the metal components at temperatures in the 1600K range

    Experiment and theoretical study of the propagation of high power microwave pulse in air breakdown environment

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    In the study of the propagation of high power microwave pulse, one of the main concerns is how to minimize the energy loss of the pulse before reaching the destination. In the very high power region, one has to prevent the cutoff reflection caused by the excessive ionization in the background air. A frequency auto-conversion process which can lead to reflectionless propagation of powerful EM pulses in self-generated plasmas is studied. The theory shows that under the proper conditions the carrier frequency, omega, of the pulse will indeed shift upward with the growth of plasma frequency, omega(sub pe). Thus, the plasma during breakdown will always remain transparent to the pulse (i.e., omega greater than omega(sub pe)). A chamber experiment to demonstrate the frequency auto-conversion during the pulse propagation through the self-generated plasma is then conducted in a chamber. The detected frequency shift is compared with the theoretical result calculated y using the measured electron density distribution along the propagation path of the pulse. Good agreement between the theory and the experiment results is obtained

    Effects Of Interfacial Charges On Doped And Undoped Hfox Stack Layer With Tin Metal Gate Electrode For Nano-Scaled Cmos Generation

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    A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped HfOx and undoped HfOx samples with titanium nitride (TiN) metal gate electrode is reported here. The metal gate work function value (4.31 eV) for TiN gate electrode was extracted from the TiN/SiO2 /p-Si capacitor. The calculated charge densities in both doped and undoped films are of the order of 1012 cm – 2. The interfacial charge present in the high-k/SiO2 interface is negative for ALD deposited pure HfO2 samples; where as the charges are positive for RF-sputter deposited pure HfO2 and Zr-doped HfOx samples. The existence of positive interface charges may be due to the fabrication process. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/964

    Criteria for the use of regression analysis for remote sensing of sediment and pollutants

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    Data analysis procedures for quantification of water quality parameters that are already identified and are known to exist within the water body are considered. The liner multiple-regression technique was examined as a procedure for defining and calibrating data analysis algorithms for such instruments as spectrometers and multispectral scanners
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